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BC807U_2
For AF input stages and drive applications High hFE Low VCE(sat) Tow (galvanic) internal isolated transistors with good matching in one package

VCEO(V) ：45
IC(mA) ：500
hFE(Min):160
hFE(Max):400

VCEO(V) ：45
IC(mA) ：500
hFE(Min):160
hFE(Max):400

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